Wide-band substrate crosstalk sensor for wireless SoC applications

被引:4
|
作者
Noulis, T. [1 ]
Merakos, P. [2 ]
Lourandakis, E. [2 ]
Stefanou, S. [2 ]
Moisiadis, Y. [2 ]
机构
[1] Aristotle Univ Thessaloniki, Dept Phys, Elect Lab, Thessaloniki 54124, Greece
[2] HELIC Inc, 2880 Zanker Rd,Suite 203, San Jose, CA 95134 USA
关键词
Substrate coupling sensing; Substrate noise; Switching activity; Wireless communications SoC; 65 nm CMOS; ON-CHIP; NOISE; TALK; FLOW;
D O I
10.1016/j.sna.2016.01.014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CMOS 65 nm substrate crosstalk noise sensor with exceptional performance characteristics was implemented and used in sensing substrate crosstalk noise signals in a wireless communications System on Chip. The sensor is integrated and fabricated onto the same die with a pin grid array packaged ZigBee Transceiver. It provides gain of 6.5 dB in an operating bandwidth from 1 MHz to 4.5 GHz. The - 1 dB gain compression point is measured for input signal amplitude of 124 mV. Its unique substrate noise sensing capacity is demonstrated using silicon measurements in an advanced wireless communication System on Chip, implemented in a CMOS process commercially available by TSMC, where a programmable CMOS control logic of 120 kGate acts as the substrate noise transmitter. The full analysis and its standalone performance are also supported with both silicon measurements and advanced radio frequency simulations results, including all RLCk parasitics from the silicon level till the package, the printed circuit board and the full measurement setup. The trends ruling the substrate crosstalk phenomenon in terms of the noise aggressor distance and the switching activity level are confirmed. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:144 / 152
页数:9
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