ELECTRONIC TRANSPORT IN RANDOM DIMER/TRIMER GaAs/AlxGa1-xAs SUPERLATTICES

被引：0

作者：

Djelti, R. ^{[1
]}

Bentata, S. ^{[2
]}

Aziz, Z. ^{[2
]}

机构：

[1] Univ Abdelhamid Ibn Badis, Dept Phys, Fac Sci, Mostaganem 27000, Algeria

[2] Univ Abdelhamid Ibn Badis, Dept Chim, Fac Sci, Mostaganem 27000, Algeria

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 25期

关键词：

Superlattice (SL); random dimer/trimer barrier; delocalized state; transmission coefficient; LOCALIZATION; ABSENCE; DIFFUSION;

D O I：

10.1142/S0217979209053473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using a transfer matrix model, we examined in this paper the extended states of a noninteracting electron in one-dimensional dimer/trimer randomly placed in superlattices (SLs). We study numerically the effects of short-range correlated disorder on the electronic transport properties and intentionally disordered GaAs/AlxGa1-xAs SLs. We consider layers having identical thickness where the Al concentration x takes at random two different values with the constraint that one of them appears only in pairs or triply i.e., the random dimer/trimer barrier.

引用

页码：5067 / 5073

页数：7

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