ELECTRONIC TRANSPORT IN RANDOM DIMER/TRIMER GaAs/AlxGa1-xAs SUPERLATTICES

被引：0
|
作者：
Djelti, R. [1 ]
Bentata, S. [2 ]
Aziz, Z. [2 ]
机构：
[1] Univ Abdelhamid Ibn Badis, Dept Phys, Fac Sci, Mostaganem 27000, Algeria
[2] Univ Abdelhamid Ibn Badis, Dept Chim, Fac Sci, Mostaganem 27000, Algeria
来源：
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2009年 / 23卷 / 25期
关键词：
Superlattice (SL); random dimer/trimer barrier; delocalized state; transmission coefficient; LOCALIZATION; ABSENCE; DIFFUSION;
D O I：
10.1142/S0217979209053473
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
By using a transfer matrix model, we examined in this paper the extended states of a noninteracting electron in one-dimensional dimer/trimer randomly placed in superlattices (SLs). We study numerically the effects of short-range correlated disorder on the electronic transport properties and intentionally disordered GaAs/AlxGa1-xAs SLs. We consider layers having identical thickness where the Al concentration x takes at random two different values with the constraint that one of them appears only in pairs or triply i.e., the random dimer/trimer barrier.
引用
收藏
页码：5067 / 5073
页数：7
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