Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

被引：5
|
作者：
Sun, Yabin [1 ]
Liu, Ziyu [2 ]
Fu, Jun [3 ]
Shi, Yanling [1 ]
Li, Xiaojin [1 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Shanghai Key Lab Multidimens Informat Proc, Shanghai 200241, Peoples R China
[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[3] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
RADIATION PHYSICS AND CHEMISTRY | 2019年 / 165卷
基金：
中国国家自然科学基金;
关键词：
SiGe HBT; Heavy ion irradiation; Annealing effect; Displacement damage; GAMMA; VOLTAGE;
D O I：
10.1016/j.radphyschem.2019.108433
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, the performance degradation and annealing behavior of NPN SiGe HBT exposed to swift heavy ion irradiation were investigated. The direct current (DC) characteristics such as forward Gummel, junction leakage current and Early voltage were studied to quantify the irradiation tolerance. Base current and junction leakage current was found to increase after irradiation. The recovery of electrical parameters was characterized after room-temperature isothermal annealing and elevated-temperature isochronal annealing. An obvious temperature-dependence effect was found in the subsequent annealing process. Significant recovery existed in the high temperature isochronal annealing process, while less was found in the room temperature self-annealing process. The different annealing behaviors of ionization damages and displacement damages are demonstrated to be responsible for various recoveries under room temperature and elevated temperature. The underlying physics mechanisms are discussed in detail.
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页数：8
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