Infrared surface absorption in Si(111)2x1 observed with reflectance anisotropy spectroscopy

被引：26
|
作者：
Goletti, C
Bussetti, G
Arciprete, F
Chiaradia, P
Chiarotti, G
机构：
[1] Univ Roma Tor Vergata, Dept Phys, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, INFM, I-00133 Rome, Italy
来源：
PHYSICAL REVIEW B | 2002年 / 66卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.66.153307
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Optical transitions between surface states associated with dangling bonds in Si(111)2x1 have been measured by means of reflection anisotropy spectroscopy in the near infrared. The results confirm those previously obtained with other optical techniques (namely surface differential reflectivity and photothermal deflection spectroscopies). The method does not require oxidation of the surface and thus opens the way to studying a number of problems in surface physics, including the temperature dependence of surface transitions in Si(111)2x1 and Ge(111)2x1.
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页码：1 / 3
页数：3
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