The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

被引：8

作者：

Xu, Hongyi ^{[1
]}

Ren, Na ^{[1
,2
]}

Wu, Jiupeng ^{[1
]}

Zhu, Zhengyun ^{[1
]}

Guo, Qing ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311200, Peoples R China

来源：

MATERIALS | 2021年 / 14卷 / 03期

关键词：

SiC; JBS; MPS; implantation; surge; IMPLANTATION;

D O I：

10.3390/ma14030663

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices' surge capability by similar to 10%.

引用

页码：1 / 13

页数：15

共 50 条

[31] Surge Current Handling Capability of SiC FETs
Li, Xueqing
Losee, Pete
Bhalla, Anup
2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 1081 - 1086
[32] 1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow
Zhang, Yuan-Lan
Liu, Pan
Lei, Guang-Yin
Zhang, Qingchun J.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (08) : 4293 - 4302
[33] Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes
Liu, Jingcun
Zhang, Ruizhe
Xiao, Ming
Pidaparthi, Subhash
Cui, Hao
Edwards, Andrew
Baubutr, Lek
Drowley, Cliff
Zhang, Yuhao
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (10) : 10959 - 10964
[34] 3.6 kV 4H-SiC JBS diodes with low RonS
Sugawara, Y
Asano, K
Saito, R
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1183 - 1186
[35] Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
Banu, Viorel
Godignon, Philippe
Jorda, Xavier
Perpinya, Xavier
Millan, Jose
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 873 - 876
[36] Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Lebedev, A. A.
Kozlovski, V. V.
Ivanov, P. A.
Levinshtein, M. E.
Zubov, A., V
SEMICONDUCTORS, 2019, 53 (10) : 1409 - 1413
[37] Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
A. A. Lebedev
V. V. Kozlovski
P. A. Ivanov
M. E. Levinshtein
A. V. Zubov
Semiconductors, 2019, 53 : 1409 - 1413
[38] Surge Current Failure Mechanisms in 4H-SiC JBS Rectifiers
Van Brunt, Edward
Barbieri, Thomas
Barkley, Adam
Solovey, Jim
Richmond, Jim
Hull, Brett
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 415 - 418
[39] Impact of Diode Characteristics on 1.2 kV SiC MOSFET and Cascode JFET Efficiency: Body Diodes Vs SiC Schottky Barrier Diodes
Karout, Mohammed Amer
Taha, Mohamed
Fisher, Craig A.
Deb, Arkadeep
Mawby, Philip
Alatise, Olayiwola
2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2023, : 202 - 208
[40] High-Current 10 kV SiC JBS Rectifier Performance
Imhoff, Eugene A.
Hobart, Karl D.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 943 - 946

← 1 2 3 4 5 →