Growth Temperature Influenced Electrical Properties of Copper-oxide Thin Films

被引：2

作者：

Sathish ^{[1
]}

Shaik, Habibuddin ^{[2
]}

Shaik, Mahammad Rafi ^{[1
,3
,4
]}

Madhavi, P. ^{[5
]}

Kosuri, Yellareswara Rao ^{[6
]}

Sheik, Abdul Sattar ^{[7
]}

Kumar, Naveen K. ^{[1
]}

机构：

[1] Nitte Meenakshi Inst Technol, Dept Phy Sics, Bangalore 560064, Karnataka, India

[2] Nitte Meenakshi Inst Technol, Ctr Nanomat & MEMS, Bangalore 560064, Karnataka, India

[3] Kongju Natl Univ, Div Adv Mat Engn, Chungnam 31080, South Korea

[4] Kongju Natl Univ, Inst Rare Met, Chungnam 31080, South Korea

[5] Indian Inst Sci, Dept Instrumentat & Appl Phy Sics, Plasma Proc Lab, Bangalore 560012, India

[6] Vignans Inst Informat Technol, Dept Phy Sics, Visakhapatnam 530049, Andhra Pradesh, India

[7] NitteMeenakshi Inst Technol, Dept Phy Sics, Bangalore 560064, Karnataka, India

来源：

INTERNATIONAL CONFERENCE ON TRENDS IN MATERIAL SCIENCE AND INVENTIVE MATERIALS: ICTMIM 2019 | 2019年 / 2105卷

关键词：

Copper-Oxide; Sputtering; Substrate Temperature; Bonding configuration; Carrier Concentration; SOLAR; EFFICIENCY;

D O I：

10.1063/1.5100692

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper-oxide thin films are deposited by using reactive magnetron sputtering at different temperatures and investigated the variation in the bonding configuration. We in-turn investigated how this bonding configuration influences its optical and electrical properties such as bandgap, resistivity mobility etc. Even the room temperature (RT) deposited films are crystalline in nature. Bandgap of 2.3 eV has been observed for the films deposited at 400 degrees C. A decreasing trend was observed in hole concentration from 2x10(18) to 7x10(16) per cm(3) with increase in substrate temperature from RT to 400 degrees C. XPS investigations were also done to understand the bonding behavior.

引用

页数：5

共 50 条

[1] Growth Temperature Influenced Electrical Properties of Copper-oxide Thin Films
Sathish
Shaik, Habibuddin
Rafi, Shaik Mahammad
Madhavi, P.
Kosuri, Yellareswara Rao
Sattar, Sheik Abdul
Kumar, K. Naveen
[J]. INTERNATIONAL CONFERENCE ON TRENDS IN MATERIAL SCIENCE AND INVENTIVE MATERIALS: ICTMIM 2019, 2019, 2105
[2] ELECTRICAL PROPERTIES OF COPPER PHTHALOCYANINE THIN FILMS AS INFLUENCED BY AMBIENT
SUSSMAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2748 - &
[3] Electrical and Optical Properties of Nanostructured Zinc Oxide Thin Films Influenced by Annealing Temperature
Shariffudin, S. S.
Mamat, M. H.
Rusop, M.
[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 8165 - 8168
[4] PROPERTIES OF REACTIVELY-SPUTTERED COPPER-OXIDE THIN-FILMS
DROBNY, VF
PULFREY, DL
[J]. THIN SOLID FILMS, 1979, 61 (01) : 89 - 98
[5] OXIDATION AND REDUCTION OF COPPER-OXIDE THIN-FILMS
LI, J
VIZKELETHY, G
REVESZ, P
MAYER, JW
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 1020 - 1029
[6] OXIDATION AND REDUCTION OF COPPER-OXIDE THIN-FILMS
LI, J
MAYER, JW
[J]. MATERIALS CHEMISTRY AND PHYSICS, 1992, 32 (01) : 1 - 24
[7] Thickness effect on electrical properties of copper oxide thin films
Kamli, Kenza
Hadef, Zakaria
Chouial, Baghdadi
Hadjoudja, Bouzid
[J]. SURFACE ENGINEERING, 2019, 35 (01) : 86 - 90
[8] THERMAL RESPONSE OF COPPER-OXIDE SUPERCONDUCTING THIN-FILMS
RIZKALLA, ME
BURRIDGE, BG
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1989, 25 (02) : 2567 - 2570
[9] Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films
Mahmoud, Alaa Y.
Alghameeti, Wafa A.
Bahabri, Fatmah S.
[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 16 (02) : 163 - 169
[10] DIODE RF SPUTTERING OF COPPER AND COPPER-OXIDE THIN-FILMS AND MULTILAYERS
BOHER, P
HOUDY, P
SCHILLER, C
VANIJZENDOORN, LJ
[J]. THIN SOLID FILMS, 1989, 174 : 91 - 98

← 1 2 3 4 5 →