UV-LED controlled GaN-based SAW phase shifter

被引：2
|
作者：
Ciplys, D. [1 ]
Shur, M. S.
Rimeika, R.
Sinius, J.
Gaska, R.
Bilenko, Yu.
Fareed, Q.
机构：
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] Vilnius Univ, Dept Radiophys, LT-10222 Vilnius, Lithuania
[3] Sensor Elect Technol Inc, Columbia, SC 29209 USA
[4] Vilnius Univ, Inst Mat Sci & Appl Res, Vilnius, Lithuania
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 21期
关键词：
D O I：
10.1049/el:20062028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2 x 10(-6) (mu W/mm(2))(-1) corresponding to 3.7 degrees phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer.
引用
收藏
页码：1254 / 1255
页数：2
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