Enhancement of hole injection for nitride-based light-emitting devices

被引：4
|
作者：
Komirenko, SM
Kim, KW
Kochelap, VA
Zavada, JM
机构：
[1] USA, Res Off, Res Triangle Pk, NC 27709 USA
[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 01期
关键词：
UV emitter; group-III nitride; enhanced hole concentration; hole injection; superlattice;
D O I：
10.1016/S0038-1101(02)00314-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel device design is proposed for a strong enhancement of hole injection current in nitride-based light-emitting heterostructures. Preliminary calculations show orders of magnitude increase in injected hole current when using the proposed superlattice hole injector device based on the real-space transfer concept. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：169 / 171
页数：3
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