Thin film field effect transistors using single-walled carbon nanotubes

被引：0
|
作者：
Shiraishi, Masashi [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
WMSCI 2005: 9TH WORLD MULTI-CONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL 8 | 2005年
关键词：
single-walled carbon nanotubes; field effect transistors; mobility; electrical breakdown;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of thin film field effect transistors (TFFETs) were examined. SWNTs were dispersed in a dimethylformamide solution in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm(2)/Vs, similar to 100 times as high as those reported for other solution-processed organic thin film FETs formed by solution processes, while a on/off ratio. was similar to 10(2). Well-known electrical breakdown allowed us to improve the on/off ratio by removing metallic SWNTs selectively. Further progress in TFFET is also presented.
引用
收藏
页码：246 / 250
页数：5
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