Anisotropic Structure Deformation in the VO2 Metal-Insulator Transition

被引:114
|
作者
Booth, Jamie M. [1 ]
Casey, Philip S. [1 ]
机构
[1] CSIRO Mat Sci & Engnc, Clayton, Vic 3169, Australia
关键词
DOPED VANADIUM DIOXIDE; DISPLACIVE PHASE-TRANSITION; TUNGSTEN;
D O I
10.1103/PhysRevLett.103.086402
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
X-ray absorption fine structure data of tungsten (VI)-doped vanadium dioxide in the insulating phase, and during the metal-insulator transition, are presented for the first time. Tungsten L-III- and vanadium K-edge data suggest that significant expansion in the [110] and [110] directions occurs across the phase transition from low to high temperature. This distortion breaks the bonds between Peierls-paired vanadium ions, opening a band gap, and reveals the nature of the mechanism by which tungsten doping lowers the transition temperature and enthalpy.
引用
收藏
页数:4
相关论文
共 50 条
  • [21] Tuning the metal-insulator phase transition in VO2 nanostructures
    Whittaker, Luisa
    Wu, Tailung
    Jaye, Cherno
    Fischer, Daniel
    Ganapathy, Sambandamurthy
    Banerjee, Sarbajit
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2010, 240
  • [22] Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
    Kim, Hyun-Tak
    NANOTECHNOLOGY IN THE SECURITY SYSTEMS, 2015, : 205 - 214
  • [23] Effects of porous nano-structure on the metal-insulator transition in VO2 films
    Xu, Yuanjie
    Huang, Wanxia
    Shi, Qiwu
    Zhang, Yang
    Zhang, Yubo
    Song, Linwei
    Zhang, Yaxin
    APPLIED SURFACE SCIENCE, 2012, 259 : 256 - 260
  • [24] Heteroepitaxial VO2 thin films on GaN: Structure and metal-insulator transition characteristics
    Zhou, You
    Ramanathan, Shriram
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (07)
  • [25] The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
    Martens, K.
    Radu, I. P.
    Mertens, S.
    Shi, X.
    Nyns, L.
    Cosemans, S.
    Favia, P.
    Bender, H.
    Conard, T.
    Schaekers, M.
    De Gendt, S.
    Afanas'ev, V. V.
    Kittl, J. A.
    Heyns, M.
    Jurczak, M.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)
  • [26] The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
    ESAT Department, KULeuven, Leuven, Belgium
    不详
    不详
    不详
    不详
    1600, American Institute of Physics Inc. (112):
  • [27] Nonvolatile Control of Metal-Insulator Transition in VO2 by Ferroelectric Gating
    Lee, Yoon Jung
    Hong, Kootak
    Na, Kyeongho
    Yang, Jiwoong
    Lee, Tae Hyung
    Kim, Byungsoo
    Bark, Chung Wung
    Kim, Jae Young
    Park, Sung Hyuk
    Lee, Sanghan
    Jang, Ho Won
    ADVANCED MATERIALS, 2022, 34 (32)
  • [28] Colossal Change in Capacitance of VO2 near the Metal-Insulator Transition
    Shimizu, Wataru
    Shinohara, Yuto
    Sugimoto, Wataru
    ELECTROCHEMISTRY, 2013, 81 (10) : 787 - 788
  • [29] Evolution of the d|| band across the metal-insulator transition in VO2
    Mossanek, RJO
    Abbate, M
    SOLID STATE COMMUNICATIONS, 2005, 135 (03) : 189 - 192
  • [30] Research progress of metal-insulator phase transition mechanism in VO2
    Luo Ming-Hai
    Xu Ma-Ji
    Huang Qi-Wei
    Li Pai
    He Yun-Bin
    ACTA PHYSICA SINICA, 2016, 65 (04)