Spin-orbit interaction enhanced polaron effect in two-dimensional semiconductors

被引：23
|
作者：
Li, Zhou [1 ]
Ma, Zhongshui
Wright, A. R.
Zhang, Chao
机构：
[1] Univ Wollongong, Sch Engn Phys, Wollongong, NSW 2522, Australia
[2] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期
基金：
澳大利亚研究理事会; 中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2713346
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that in two-dimensional semiconductors, the electron-phonon interaction and polaron mass correction are both significantly enhanced by the Rashba spin-orbit coupling. The mass correction is positive for the upper Rashba branch and negative for the lower Rashba branch. Both Rashba branches have the same polaron binding energy, which is higher than that for systems in the absence of spin-orbit interaction. To the leading order, the correction to the binding energy is proportional to the square of the spin-orbit coupling strength. (c) 2007 American Institute of Physics.
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页数：3
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