In-situ Raman spectroscopy of electronic processes in fullerene thin films

被引:0
|
作者
Phelan, SB [1 ]
O'Connell, BS [1 ]
Farrell, G [1 ]
Chambers, G [1 ]
Byrne, HJ [1 ]
机构
[1] Dublin Inst Technol, Facil Opt Characterizat & Spectroscopy, Sch Phys, Dublin 8, Ireland
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current voltage characteristics of C-60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (similar to2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C-60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.
引用
收藏
页码:261 / 266
页数:6
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