Linkage and donor-acceptor effects on resistive switching memory devices of 4-(N-carbazolyl) triphenylamine-based polymers

被引:23
|
作者
Huang, Tzu-Tien [1 ]
Tsai, Chia-Liang [1 ]
Hsiao, Sheng-Huei [2 ]
Liou, Guey-Sheng [1 ]
机构
[1] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10617, Taiwan
[2] Natl Taipei Univ Technol, Dept Chem Engn & Biotechnol, Taipei 10608, Taiwan
关键词
ELECTROCHROMIC AROMATIC POLYAMIDES; NONVOLATILE REWRITABLE MEMORY; CONJUGATED POLYMERS; CHARGE-TRANSFER; SOLAR-CELLS; THIN-FILMS; POLYIMIDES; DERIVATIVES; MOIETIES; BEHAVIOR;
D O I
10.1039/c6ra02349e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In order to gain deeper insight into the linkage effect and donor-acceptor effect on memory behavior (from DRAM to WORM), 4-(N-carbazolyl)triphenylamine-based polyimides and polyamides t-butyl-6FPI, t-butyl-DSPI, OMe-6FPI, OMe-DSPI, t-butyl-6FPA, t-butyl-DSPA, OMe-6FPA, and OMe-DSPA were synthesized and their memory behaviours were investigated.
引用
收藏
页码:28815 / 28819
页数:5
相关论文
共 16 条
  • [11] Synthesis of thienopyrazine- and cyclofluorene-thiophene-based donor-acceptor low-band gap polymers and their application in memory devices
    Mei, Binhua
    Bai, Ju
    Zhang, Yuhang
    Ma, Yang
    Hou, Yanjun
    Wang, Shuhong
    Wang, Cheng
    JOURNAL OF APPLIED POLYMER SCIENCE, 2024, 141 (39)
  • [12] Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
    Kim, Hee-Dong
    Yun, Min Ju
    Kim, Sungho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (03) : 435 - 438
  • [13] Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
    Hee-Dong Kim
    Min Ju Yun
    Sungho Kim
    Journal of the Korean Physical Society, 2016, 69 : 435 - 438
  • [14] Electrosynthesis of electrochromic polymers based on bis-(4-(N-carbazolyl)phenyl)-phenylphosphine oxide and 3,4-propylenedioxythiophene derivatives and studies of their applications in high contrast dual type electrochromic devices
    Kuo, Chung-Wen
    Chang, Jui-Cheng
    Lee, Li-Ting
    Chang, Jeng-Kuei
    Huang, Yu-Ting
    Lee, Pei-Ying
    Wu, Tzi-Yi
    JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS, 2022, 131
  • [15] Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices
    Kim, Hee-Dong
    Yun, Minju
    Kim, Sungho
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 651 : 340 - 343
  • [16] Fabrication of Oriented n-Type Thermoelectric Polymers by Polarity Switching in a DPP-Based Donor-Acceptor Copolymer Doped with FeCl3
    Zeng, Huiyan
    Mohammed, Mohammed
    Untilova, Viktoriia
    Boyron, Olivier
    Berton, Nicolas
    Limelette, Patrice
    Schmaltz, Bruno
    Brinkmann, Martin
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (05)