Photoluminescence and Photoconductivity of ZnS-Coated ZnO Nanowires

被引:133
|
作者
Bera, Ashok [1 ]
Basak, Durga [1 ]
机构
[1] Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, India
关键词
surface modification; nanowires; optoelectronic properties; ultraviolet; ZnO-ZnS; ARRAYS;
D O I
10.1021/am900686c
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZnO nanowires (NWs) with a ZnS coating are synthesized in order to modify the surface without changing the diameter of the NWs. They have the wurtzite ZnO at the core and a cubic ZnS at the outer layer. The NWs show a sharp ultraviolet and a broad visible emission of the photoluminescence spectra. Surface modification has led to a change in the position of the maxima of the visible emission in ZnO-ZnS NWs. The photocarrier relaxation under steady UV illumination occurs in ZnO NW arrays but is absent in ZnO-ZnS NW arrays. The dark current value for both type of NWs are similar, whereas the photocurrent value is much higher in the surface-modified NWs. Higher photocurrent value indicates a transport of the photogenerated carriers from the ZnS layer to ZnO during UV illumination. The carrier transport mechanism is proposed through a model.
引用
收藏
页码:408 / 412
页数:5
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