Study of the J-V characteristics of Bi4Ti3O12 ferroelectric thin film

被引：0
|
作者：
Li, Jianjun [1 ]
Yu, Jun [1 ]
Wang, Yunbo [1 ]
Guo, Dongyun [1 ]
Wang, Longhai [1 ]
Gao, Junxiong [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect, Wuhan 430074, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2006年 / 85卷
关键词：
Bi4Ti3O12; ferroelectric thin film; sol-gel method; J-V characteristics; Schottky emission; space-charge limited currents;
D O I：
10.1080/10584580601085826
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The phenomenon of leakage current becomes prominent which directly influences the performance of ferroelectric thin film memory, when the thin film becomes thinner. The Bi4Ti3O12 ferroelectric thin film was prepared on Pt/Ti/SiO2/Si substrate by sol-gel method, and Pt top dot electrodes with an area of 0.06 mm(2) were deposited through a shadow mask by RF magnetron sputtering. The J-V characteristics were measured through metal-ferroelectric film-metal(MFM) structure under direct voltage. Then the rectifying junction characteristics of metal-ferroelectric film structure and different conductive mechanisms in different voltage range (0 similar to +/- 6V) were discussed in this paper.
引用
收藏
页码：145 / 154
页数：10
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