Mechanisms for intraband energy relaxation in semiconductor quantum dots: The role of electron-hole interactions

被引:224
|
作者
Klimov, VI
Mikhailovsky, AA
McBranch, DW
Leatherdale, CA
Bawendi, MG
机构
[1] Los Alamos Natl Lab, Chem Sci & Technol Div, Los Alamos, NM 87545 USA
[2] MIT, Dept Chem, Cambridge, MA 02139 USA
[3] MIT, Ctr Mat Sci & Engn, Cambridge, MA 02139 USA
关键词
D O I
10.1103/PhysRevB.61.R13349
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
To evaluate the role of nonphonon energy relaxation mechanisms in quantum dots and in particular the role of electron-hole (e-h) interactions, we have studied femtosecond carrier dynamics in CdSe colloidal nanoparticles in which the e-h separation (coupling) is controlled using different types of surface ligands. In dots capped with hole accepting molecules, the e-h coupling is strongly reduced after the hole is transferred to a capping group. By re-exciting an electron within the conduction band at different stages of hole transfer and monitoring its relaxation back into the ground state, we observe a more than tenfold increase in the electron relaxation time (from 250 fs to 3 ps) after the completion of the hole transfer to the capping molecule. This strongly indicates that electron relaxation in quantum dots is dominated not by phonon emission but by the e-h energy transfer.
引用
收藏
页码:13349 / 13352
页数:4
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