Speeding up simulation time in EEPROM memory designs

被引:3
|
作者
Aziza, H. [1 ]
Delsuc, B. [2 ]
Portal, J. M. [1 ]
Nee, D. [2 ]
机构
[1] IMT, CNRS, UMR 6137, L2MP,Polytech, Technopole Chateau Gombert, F-13451 Marseille 20, France
[2] ST Microelect, F-13106 Rousset, France
关键词
D O I
10.1109/DTIS.2006.1708695
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an efficient technique to decrease siniulation time of EEPROM memory arrays. This technique is based on the complexity reduction Of an existing compact EEPROM model. This original model is Unsuitable when dealing with large memory arrays simulations. To overcome this limitation. we propose two alternative models which allow reducing time and ineniory space overheads when compared to the conipact model. The first EEPROM model (level 1) is as simple as possible and provides fast simulation time. The second model (level 2) is a compromise between the compact inodel and the level 1 model. We also present simulation fine results using these different models within memory arrays.
引用
收藏
页码:285 / 288
页数:4
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