X-ray microdiffraction imaging of a silicon microcantilever

被引：4
|
作者：
Hassani, Kh.
Sutton, M.
Tkachuk, A.
Holt, M.
机构：
[1] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[2] Xradia Inc, Concord, CA 94520 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 06期
关键词：
D O I：
10.1063/1.2713995
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A triple crystal x-ray topography technique with sample and analyzer mesh scans has been used to obtain micron resolution lattice orientation and strain maps of a single crystal silicon microcantilever. Both free and slightly bent states of the cantilever have been studied. The results show similar to 8 mdeg twist between the cantilever and the supporting base, 0.3 m radius of anticlastic curvature, and strain on the order of -2x10(-5) in the direction of surface normal. (c) 2007 American Institute of Physics.
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页数：7
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