Photoinduced phenomena on the surface of wide-band-gap oxide catalysts

被引:78
|
作者
Volodin, AM [1 ]
机构
[1] Boreskov Inst Catalysis, Novosibirsk 630090, Russia
基金
俄罗斯基础研究基金会;
关键词
surface photochemistry; wide-band-gap oxides; electron donor-acceptor complexes; ion-radicals;
D O I
10.1016/S0920-5861(00)00245-5
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
This article reviews papers devoted to the investigation of photoinduced processes on non-semiconductor oxide catalysts. The main results of our ESR in situ studies of such systems are presented. Wide-band-gap oxides are shown to constitute a new and very promising class of photocatalysts capable of functioning under illumination with visual light. It is shown that in many cases the light is initially absorbed by charge transfer complexes with the following generation of ion-radical intermediates with high reactivity. A very important feature of photoinduced reactions in the absorption band of charge transfer complexes is a significant shift of their red edge to longer wavelengths in comparison with similar processes in homogeneous systems. In many cases, the formation of such complexes is caused by the existence of strong acceptor or donor sites typical for many oxide catalysts with pronounced acidic or basic properties. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:103 / 114
页数:12
相关论文
共 50 条
  • [31] Subpicosecond study of carrier trapping dynamics in wide-band-gap crystals
    Martin, P
    Guizard, S
    Daguzan, P
    Petite, G
    DOliveira, P
    Meynadier, P
    Perdrix, M
    PHYSICAL REVIEW B, 1997, 55 (09): : 5799 - 5810
  • [32] Universal spin-dependent variable range hopping in wide-band-gap oxide ferromagnetic semiconductors
    Dai You-Yong
    Yan Shi-Shen
    Tian Yu-Feng
    Chen Yan-Xue
    Liu Guo-Lei
    Mei Liang-Mo
    CHINESE PHYSICS B, 2010, 19 (03)
  • [33] In-Gap States in Wide-Band-Gap SrTiO3 Analyzed by Cathodoluminescence
    Yang, Kai-Hsun
    Chen, Ting-Yu
    Ho, New-Jin
    Lu, Hong-Yang
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (06) : 1811 - 1816
  • [34] New Insights on Output Capacitance Losses in Wide-Band-Gap Transistors
    Nikoo, Mohammad Samizadeh
    Jafari, Armin
    Perera, Nirmana
    Matioli, Elison
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (07) : 6663 - 6667
  • [35] DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS
    CHADI, DJ
    PHYSICAL REVIEW LETTERS, 1994, 72 (04) : 534 - 537
  • [36] Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells
    Tamulaitis, G.
    Mickevicius, J.
    Kuokstis, E.
    Liu, K.
    Shur, M. S.
    Zhang, J. P.
    Gaska, R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2096 - +
  • [37] Introducing wide-band-gap silicon carbide production into a silicon fab
    Shovlin, J
    Woodin, R
    Witt, T
    MICRO, 2004, 22 (06): : 45 - +
  • [38] Progress and Prospect of Growth of Wide-Band-Gap Group III Nitrides
    Amano, Hiroshi
    III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION, 2017, 133 : 1 - 9
  • [39] Electronic excitation in femtosecond laser interactions with wide-band-gap materials
    Itina, Tatiana E.
    Shcheblanov, Nikita
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 98 (04): : 769 - 775
  • [40] Electronic excitation in femtosecond laser interactions with wide-band-gap materials
    Tatiana E. Itina
    Nikita Shcheblanov
    Applied Physics A, 2010, 98 : 769 - 775