The Effect of RF Power on the Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Film

被引：0
|
作者：
Chen, Kai-Huang [2 ]
Yang, Cheng-Fu [1 ]
Tzou, Wen-Cheng [3 ]
Huang, Chien-Jung [4 ]
Chou, Dei-Wei [5 ]
机构：
[1] Natl Univ Kaohsiung, Dept Chem & Mat Engn, Kaohsiung, Taiwan
[2] Tung Fang Inst Technol, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan
[3] So Taiwan Univ Technol, Dept Electropt Engn, Tainan, Taiwan
[4] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung, Taiwan
[5] Air Force Inst Technol, Dept Aviat & Commun Elect, Kaohsiung, Taiwan
来源：
FERROELECTRICS | 2009年 / 384卷
关键词：
DRAM; Thin films; Dielectric; Leakage Current; RF Sputtering; ABLATION;
D O I：
10.1080/00150190902881454
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Ba(Zr0.1Ti0.9)O-3 (BZT) ceramic target is fabricated as the depositing target of BZT thin films, and the BZT thin films are successfully deposited on Pt/Ti/SiO2/Si substrate under optimal radio frequency (RF) depositing parameters with different RF power. The RF power has large effect on the crystalline orientation, thickness and roughness of BZT thin films. The metal-ferroelectric-metal structure is fabricated for the characteristic measurement. The influence of RF power on the dielectric constant and leakage current density of BTZ thin films will be investigated. As RF power is equal to 160 W, the maximum dielectric constant and lower leakage current density can be obtained.
引用
收藏
页码：166 / 173
页数：8
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