The effect of substrate surface on the physical properties of SnS films

被引:46
|
作者
Devika, M. [1 ]
Reddy, N. Koteeswara
Ramesh, K.
Sumana, H. R.
Gunasekhar, K. R.
Gopal, E. S. R.
Reddy, K. T. Ramakrishna
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[3] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词
D O I
10.1088/0268-1242/21/10/024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of substrates on the physical properties of tin mono-sulphide (SnS) films has been studied. The SnS films were deposited using the resistive thermal evaporation method on CORNING 7059 glass, ITO-coated glass, Si wafer and Ag-coated glass substrates. The as-deposited films exhibited nearly stoichiometry between Sn and S elements with a Sn/S at.% ratio of similar to 1.05. Structural analysis of these films indicated that the films are crystallized in the form of an orthorhombic crystalline structure and showed ( 1 1 1) as a dominant peak, except for the films grown on Si substrates. Si/SnS films exhibited ( 0 4 0) as a dominant peak. The ITO/SnS films showed high values of rms roughness (similar to 14.9 nm) and average grain size (similar to 225 nm), along with a low electrical resistivity of 8.9 x 10(-3) Omega cm as compared to SnS films grown on glass, Si and Ag substrates. The ITO/SnS films exhibit low resistivity, probably due to the large size of grains, and could be suitable for optoelectronic device applications.
引用
收藏
页码:1495 / 1501
页数:7
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