Active-matrix Organic Light Emitting Diode using Inverse Staggered Poly-Si TFT with a Center-offset Gated Structure

被引：0

作者：

Kang, Dong Han ^{[1
]}

Oh, Jae Hwan ^{[1
]}

Park, Mi Kyung ^{[1
]}

Park, Tae Jin ^{[1
]}

Oh, Beom Seok ^{[1
]}

Kim, Gyeong Heon ^{[1
]}

Lee, Eun Ho ^{[1
]}

Hur, Ji Ho ^{[1
]}

Jang, Jin ^{[1
]}

Chang, Young Jin ^{[2
]}

Choi, Jae Beom ^{[2
]}

Kim, Chi Woo ^{[2
]}

机构：

[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea

[2] Samsung Mobile Display, Ctr Technol, Yongin 446711, Gyeonggi Do, South Korea

来源：

2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年

关键词：

THIN-FILM-TRANSISTOR; LEAKAGE CURRENT; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a low cost AM backplane using non-laser polycrystalline silicon (poly-Si) having inverse staggered TFT. The thin-film transistors (TFTs) have a center-offset gated structure to reduce the leakage current without scarifying the on-currents. A center-offset length of the TFTs has 3 mu m for both switching and driving TFTs. Finally, we have made a 2.2 inch QQVGA (160 x 120) active-matrix organic light emitting diode (AMOLED) display with conventional 2T 1C pixel circuits.

引用

页码：92 / +

页数：2

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