Characteristic enhancement of InGaN-based light emitting diodes grown on pattern sapphire substrates

被引：1
|
作者：
Wang, Huanyou [1 ]
Jin, Gui [1 ,2 ]
Tan, Qiaolai [1 ,3 ]
机构：
[1] Xiangnan Univ, Acad Elect Informat & Elect Engn, Chenzhou 423000, Peoples R China
[2] South China Normal Univ, Sch Informat & Optoelect Sci & Technol, Guangzhou 510631, Peoples R China
[3] Hunan Normal Univ, Inst Phys & Informat Sci, Changsha 410081, Peoples R China
来源：
2019 7TH INTERNATIONAL CONFERENCE ON MECHANICAL ENGINEERING, MATERIALS SCIENCE AND CIVIL ENGINEERING | 2020年 / 758卷
关键词：
OUTPUT POWER; GAN; FILMS;
D O I：
10.1088/1757-899X/758/1/012087
中图分类号：
TU [建筑科学];
学科分类号：
0813 ;
摘要：
Blue light-emitting diodes (LEDs) with an InGaN multi-quantum well (MQW) structure were fabricated on cone-shaped patterned sapphire substrate (PSS) using a single growth process of metal organic chemical vapor deposition (MOCVD). The PSS was proved to be an efficient method to decrease the threading dislocation (TD) density in GaN epifilm with the lateral growth mode on PSS. The LED designed on PSS increased the electroluminescene (EL) intensity. The internal quantum efficiency is increased by reducing the dislocation density, and light extraction efficiency is also enhanced owing to PSS.
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页数：4
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