Superradiant dissipative tunneling in a double p-i-n semiconductor heterostructure with thermal injection of electrons

被引：4
|
作者：
Stefanescu, Eliade
Scheid, Werner
机构：
[1] Univ Giessen, Inst Theoret Phys, D-35392 Giessen, Germany
[2] Acad Romana, Inst Math Simion Stoilov, Ctr Adv Studies Phys, Bucharest 76117, Romania
来源：
PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS | 2007年 / 374卷 / 01期
关键词：
dissipation; master equation; fermions; superradiance; p-i-n structure; quantum dot;
D O I：
10.1016/j.physa.2006.07.014
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We propose a semiconductor device with two p-i-n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：203 / 210
页数：8
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