Performance improvement of InP-based differential HBT VCO using the resonant tunneling diode

被引：2
|
作者：
Jeong, Yongsik [1 ]
Choi, Sunkyu [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Div Elect Engn, Dept Elect Engn & Comp Sci, 373-1,Guseong Dong, Taejon 305701, South Korea
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ICIPRM.2006.1634107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new InP-based RTD/HBT VCO, which has two RTDs at the nodes of resonators to increase the total negative gm in the conventional HBT VCO circuit, has been proposed for the first time. The output power and phase noise of the proposed VCO have been found to be enhanced by 3.3 dBm and 8.7 dBc/Hz, respectively, compared to the conventional one.
引用
收藏
页码：42 / +
页数：2
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