Nuclear spin switch in semiconductor quantum dots

被引：120
|
作者：
Tartakovskii, A. I. [1 ]
Wright, T.
Russell, A.
Fal'ko, V. I.
Van'kov, A. B.
Skiba-Szymanska, J.
Drouzas, I.
Kolodka, R. S.
Skolnick, M. S.
Fry, P. W.
Tahraoui, A.
Liu, H. -Y.
Hopkinson, M.
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1103/PhysRevLett.98.026806
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a thresholdlike enhancement or reduction of the local nuclear field by up to 3 T can be generated by varying the pumping intensity. The excitation power threshold for such a nuclear spin "switch'' is found to depend on both the external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of the spin transfer from electrons to the nuclei of the dot.
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页数：4
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