A SiGe low-noise amplifier for 3.1-10.6 GHz ultra-wideband wireless receivers

被引：0

作者：

Shi, Bo ^{[1
]}

Chia, Michael Yan Wah ^{[1
]}

机构：

[1] Inst Infocomm Res, 20 Sci Pk Rd 02-21-25,TeleTech Pk,Singaporte Sci, Singapore 117674, Singapore

来源：

2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年

关键词：

RF integrated circuit; low-noise amplifier; ultra-wideband (UWB); SiGe; wideband amplifier; feedback amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the design of a wideband SiGe low-noise amplifier (LNA) for 3.1-10.6 GHz ultra-wideband (UVVB) wireless receivers. The LNA uses a circuit topology consisting of two gain stages in multiple feedback loops to achieve broadband flat gain together with low noise figure and good input match. Fabricated in a 0.25 mu SiGe. BiCMOS technology, the IC prototype delivers a flat power gain of nominal 20 dB and a noise figure of 2.8-4.7 dB over the entire UWB frequency band, while achieving an input IP3 of -8 dBm. The amplifier occupies only 0.34 mm(2) chip area and consumes 11 mA from a 2.7 V supply.

引用

页码：57 / 60

页数：4

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