Field-plate optimization of AlGaN/GaN HEMTs

被引：0
|
作者：
Palankovski, Vassil [1 ]
Vitanov, Stanislav [1 ]
Quay, Ruediger [2 ]
机构：
[1] TU Wien, Adv Mat & Device Anal Grp, Inst Microelect, Gusshausstr 27-29, A-1040 Vienna, Austria
[2] Fraunhofer Inst Solid State Phys IAF, D-79108 Freiburg, Germany
来源：
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006 | 2006年
基金：
奥地利科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical geometrical variables controlling the field distribution in the channel are determined and optimized for improved device reliability using two-dimensional numerical simulations. The results are implemented in the design of devices fabricated with 600 nm down to 150 mn gate lengths. Good agreement between experimental and simulation data is achieved.
引用
收藏
页码：107 / 110
页数：4
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