Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate

被引：12

作者：

Zhou, Yunlu ^{[1
]}

Qin, Jian ^{[2
]}

Xie, Zijing ^{[1
]}

Wang, Hong ^{[1
,3
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Phys & Optoelect, Guangzhou 510640, Peoples R China

[2] Guangzhou Univ, Dept Elect & Commun Engn, Guangzhou 510006, Peoples R China

[3] South China Univ Technol, Zhongshan Inst Modern Ind Technol, Zhongshan 528437, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2023年 / 200卷

关键词：

AlGaN; GaN HEMTs; Field plate; Breakdown voltage; Current collapse; CURRENT COLLAPSE SUPPRESSION; BREAKDOWN VOLTAGE; GAN MOSHEMT; POWER;

D O I：

10.1016/j.sse.2022.108571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose optimized field plate structures to improve the performance of AlGaN / GaN HEMT under electrical stress. The two structures are T-gate AlGaN / GaN HEMT with dual discrete field plates (DDFP-HEMT) and single discrete field-plate (SDFP-HEMT). Benefiting from the modulation effects of the field plate on the electric field, the DDFP-HEMT and SDFP-HEMT exhibit better breakdown characteristics and current collapse suppression. The performance of the two structure devices and no-discrete-field-plate devices (NDFP- HEMT) is explored in Silvaco TCAD. The DDFP-HEMT and SDFP-HEMT achieve the highest off-state breakdown voltage (VBD) of 1188 V and 1120 V in the experiment, respectively, being 33 % and 25 % higher than that of NDFP-HEMT, respectively. In particular, the current collapse in DDFP-HEMT and SDFP- HEMT is reduced by 24 % and 9 % under 200 V stress bias, respectively, when compared to NDFP-HEMT. The DDFP-HEMT shows greatest reliability improvement in the three samples.

引用

页数：5

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