Imaging deep trap distributions by low vacuum scanning electron microscopy

被引：7
|
作者：
Toth, Milos
Knowles, W. Ralph
Phillips, Matthew R.
机构：
[1] FEI Co, Newburyport, MA 01950 USA
[2] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW 2007, Australia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 07期
关键词：
D O I：
10.1063/1.2644159
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of such contrast, the behavior of which is explained by a model of charge generation and transport in dielectrics imaged by LVSEM. The technique presented is applicable to studies of charge traps in dielectrics, device failure modes, and contrast mechanisms in electron microscopy. (c) 2007 American Institute of Physics.
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页数：3
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