Morphology and Structure of Self-Assembled InxGa1-xAs Quantum Dots Grown on GaAs (100) Using MOCVD

被引：0
|
作者：
Othaman, Zulkafli [1 ]
Aryanto, Didik [1 ]
Ismail, Abd. Khamim [1 ]
机构：
[1] UTM, Dept Phys, Fac Sci, Skudai 81310, Johor, Malaysia
来源：
NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 1136卷
关键词：
Quantum Dots; In(x)Ga(1-x)As; MOCVD; AFM; HR-XRD; MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; INAS; SURFACE; STRAIN; THICKNESS; 1.3-MU-M; LAYERS;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Stacked In(x)Ga(1-x)As quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski-Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of In(x)Ga(1-x)As QDs were confirmed by the HRXRD analysis. Composition of the dots on the top most layers was related to the number of stack layers. The observed PL peak position was blue-shifted due to different number of stacked QDs. The PL intensity also dramatically increase, which shows the possibility of the QDs application in optical devices at room temperature.
引用
收藏
页码：36 / 40
页数：5
相关论文
共 50 条
  • [21] Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice
    Liu, B
    Zhuang, QD
    Yoon, SF
    Dai, JH
    Kong, MY
    Zeng, YP
    Li, JM
    Lin, LY
    Zhang, HJ
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2001, 15 (13): : 1959 - 1968
  • [22] Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer
    Yu, Y.
    Huang, L. R.
    Tian, P.
    Huang, D. X.
    OPTOELECTRONIC MATERIALS AND DEVICES V, 2011, 7987
  • [23] Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD
    Motlan
    Goldys, EM
    Tansley, TL
    JOURNAL OF CRYSTAL GROWTH, 2002, 236 (04) : 621 - 626
  • [24] Optical spectroscopy of GaSb/GaAs self-assembled quantum dots grown by MOCVD
    Motlan
    Goldys, EM
    Butcher, KSA
    Tansley, TL
    COMMAD 2000 PROCEEDINGS, 2000, : 419 - 422
  • [25] Optical diagnostics of quantum dots in GaAS/InxGa1-xAs heterostructures
    Aleshkin, VY
    Gusev, SA
    Danil'tsev, VM
    Drozdov, MN
    Khrykin, OI
    Krasil'nik, ZF
    Revin, DG
    Shashkin, VI
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 1-2 : 143 - 148
  • [26] Influence of InxGa1-xAs (0 ≤ x ≤ 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots
    Wang, XD
    Niu, ZC
    Feng, SL
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9A): : 5076 - 5079
  • [27] Optical diagnostics of quantum dots in GaAs/InxGa1-xAs heterostructures
    Aleshkin, VY
    Danil'tsev, VM
    Khrykin, OI
    Krasil'nik, ZF
    Revin, DG
    Shashkin, VI
    ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES, 1997, 42 : 65 - 66
  • [28] Influence of InxGa1-xAs (0≤x≤0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots
    Wang, Xiao Dong, 1600, JJAP, Tokyo (39):
  • [29] InxGa1-xAs/GaAs Quantum Rings Grown by Droplet Epitaxy
    Pankaow, Naraporn
    Panyakeow, Somsak
    Ratanathammaphan, Somchai
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [30] Energy spectra and oscillatory magnetization of two-electron self-assembled InxGa1-xAs quantum rings in GaAs
    Fomin, V. M.
    Gladilin, V. N.
    Devreese, J. T.
    Kleemans, N. A. J. M.
    Koenraad, P. M.
    PHYSICAL REVIEW B, 2008, 77 (20):
12345