Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates

被引：27
|
作者：
Choi, Suk [1 ,2 ]
Kim, Hee Jin [1 ,2 ]
Zhang, Yun [1 ,2 ]
Bai, Xiaogang [3 ]
Yoo, Dongwon [1 ,2 ]
Limb, Jae [1 ,2 ]
Ryou, Jae-Hyun [1 ,2 ]
Shen, Shyh-Chiang [1 ,2 ]
Yoder, P. D. [4 ]
Dupuis, Russell D. [1 ,2 ]
机构：
[1] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[4] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 20期
关键词：
Avalanche photodiode (APD); epitaxial growth; gallium nitride; Geiger mode;
D O I：
10.1109/LPT.2009.2029073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultraviolet (UV) GaN p-i-n avalanche photodiodes (APDs) on low dislocation density free-standing GaN substrates were grown and fabricated. The GaN APD showed a stable avalanche multiplication gain in a linear mode, using UV illumination. In Geiger-mode operation at room temperature with gated quenching, no after-pulsing effect was observed up to 100 kHz. The single-photon detection efficiency and dark-count probability were measured to be similar to 1% and similar to 3 x 10(-2) at 265 nm, respectively.
引用
收藏
页码：1526 / 1528
页数：3
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