On the mechanism of charge transfer in n+-CdS-p-InP-p+-InP heterostructures

被引：0

作者：

Slobodchikov, SV ^{[1
]}

Salikhov, KM ^{[1
]}

Russu, EV ^{[1
]}

Malinin, YG ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 07期

关键词：

Recombination; Charge Transfer; Temperature Interval; Local Center; Reverse Current;

D O I：

10.1134/1.1262935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanisms of charge transfer in n(+)-CdS-p-InP-p(+)-InP heterostructures were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low temperatures) or by recombination in the space-charge region. The reverse current is controlled by tunneling via local centers and by direct interband tunneling. Breakdown in these heterojunctions also proceeds by the tunneling mechanism. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：628 / 630

页数：3

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