On the mechanism of charge transfer in n+-CdS-p-InP-p+-InP heterostructures

被引：0
|
作者：
Slobodchikov, SV [1 ]
Salikhov, KM [1 ]
Russu, EV [1 ]
Malinin, YG [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 07期
关键词：
Recombination; Charge Transfer; Temperature Interval; Local Center; Reverse Current;
D O I：
10.1134/1.1262935
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The mechanisms of charge transfer in n(+)-CdS-p-InP-p(+)-InP heterostructures were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low temperatures) or by recombination in the space-charge region. The reverse current is controlled by tunneling via local centers and by direct interband tunneling. Breakdown in these heterojunctions also proceeds by the tunneling mechanism. (C) 2000 MAIK "Nauka/Interperiodica".
引用
收藏
页码：628 / 630
页数：3
相关论文
共 50 条
  • [1] On the mechanism of charge transfer in n+-CdS-p-InP-p+-InP heterostructures
    S. V. Slobodchikov
    Kh. M. Salikhov
    E. V. Russu
    Yu. G. Malinin
    Technical Physics Letters, 2000, 26 : 628 - 630
  • [2] REVERSE CURRENTS IN P-N INGAASP/INP HETEROSTRUCTURES
    GORELENOK, AT
    GRUZDOV, VG
    EVSTROPOV, VV
    SIDOROV, VG
    TARASOV, IS
    FEDOROV, LM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1269 - 1271
  • [3] PHOTOVOLTAIC EFFECT AT N CDS-P INP HETEROJUNCTIONS
    ITO, K
    OHSAWA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (08) : 1259 - 1260
  • [4] INJECTION ELECTROLUMINESCENCE IN N-CDS-P-INP HETEROJUNCTIONS
    YOSHIKAWA, A
    ISHIZAKI, O
    KASAI, H
    NISHIMAKI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) : 2267 - 2268
  • [5] REVERSE CURRENTS IN P-N InGaAsP/InP HETEROSTRUCTURES.
    Gorelenok, A.T.
    Gruzdov, V.G.
    Evstropov, V.V.
    Sidorov, V.G.
    Tarasov, I.S.
    Fedorov, L.M.
    Soviet physics. Semiconductors, 1984, 18 (11): : 1269 - 1271
  • [6] Band discontinuity in strained In(As,P)/InP heterostructures
    Monier, C
    Vilela, MF
    Serdiukova, I
    Freundlich, A
    APPLIED PHYSICS LETTERS, 1998, 72 (13) : 1587 - 1589
  • [7] Photoelectric properties of n-CdS/p-InP heterojunctions
    V. M. Botnaryuk
    L. V. Gorchak
    I. I. Diaconu
    V. Yu. Rud’
    Yu. V. Rud’
    Semiconductors, 1998, 32 : 61 - 66
  • [8] ELECTROLUMINESCENT P-INP-N-CDS HETERO-DIODES
    WAGNER, S
    SHAY, JL
    BHAR, TN
    SCHIAVONE, LM
    BACHMANN, KJ
    BUEHLER, E
    APPLIED PHYSICS LETTERS, 1976, 29 (07) : 431 - 432
  • [9] Photoelectric properties of n-CdS/p-InP heterojunctions
    Botnaryuk, VM
    Gorchak, LV
    Diaconu, II
    Rud, VY
    Rud, YV
    SEMICONDUCTORS, 1998, 32 (01) : 61 - 66
  • [10] Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions
    Muzafarova, S. A.
    Mirsagatov, Sh. A.
    Janabergenov, J.
    PHYSICS OF THE SOLID STATE, 2007, 49 (06) : 1168 - 1174
12345