DISORDERED SMALL DEFECT CLUSTERS IN SILICON

被引：0

作者：

Zasinas, E. ^{[1
]}

Vaitkus, J. V. ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, Sauletekio 9, LT-10222 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2015年 / 55卷 / 04期

关键词：

radiation clusters; disordered semiconductor; local levels;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The ionizing radiation induced disordered defect clusters and their relaxation in silicon were simulated by the density functional method. It was found that a non-relaxed disordered cluster gives rise to a great number of localized states having their energy levels within the semiconductor forbidden band gap. After the relaxation, however, the density of these states significantly decreases leaving only several relatively shallow donor and acceptor state levels that may contribute to trapping of free carriers and shrinkage of an effective band gap.

引用

页码：330 / 334

页数：5

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