Strain-induced optical anisotropy in self-organized quantum structures at the E1 transition

被引：11

作者：

Prieto, JA ^{[1
]}

Armelles, G ^{[1
]}

Priester, C ^{[1
]}

García, JM ^{[1
]}

González, L ^{[1
]}

García, R ^{[1
]}

机构：

[1] CSIC, CNM, Inst Microelect Madrid, Madrid 28760, Spain

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-plane optical anisotropies of (001)-oriented InAs/InP self-assembled quantum wires and dots structures are studied by means of photoreflectance in the spectral region of the E-1 transition of bulk InAs. The energy position of the transition observed in the quantum wires depends on the light polarization; quantum dots do not exhibit, in contrast, such an optical anisotropy. This anisotropy is attributed to the splitting of the four-fold degenerate E-1 transition produced by the strong triaxial behavior of the strain that appears in wires and not in dots. (C) 2000 American Institute of Physics. [S0003-6951(00)00616-1].

引用

页码：2197 / 2199

页数：3

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