Wide Bandgap Sb2S3 Solar Cells

被引:135
|
作者
Shah, Usman Ali [1 ,2 ]
Chen, Shiwu [1 ,2 ]
Khalaf, Gomaa Mohamed Gomaa [1 ,2 ,3 ]
Jin, Zhixin [1 ,2 ,4 ]
Song, Haisheng [1 ,2 ]
机构
[1] Huazhong Univ Sci & Technol HUST, Wuhan Natl Lab Optoelect WNLO, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[2] Huazhong Univ Sci & Technol HUST, Sch Opt & Elect Informat, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China
[3] Natl Res Inst Astron & Geophys NRIAG, EL Marsad St 1, Cairo, Egypt
[4] Yanshan Univ, Sch Sci, Qinhuangdao 066012, Hebei, Peoples R China
基金
中国国家自然科学基金;
关键词
loss mechanism; power conversion efficiency; Sb; S-2; (3); Shockley– Queisser limit; tandem solar cells; thin film quality; ENHANCED PHOTOVOLTAIC PERFORMANCE; CHARGE-CARRIER RECOMBINATION; MULTIPLE-EXCITON GENERATION; HOLE-TRANSPORTING MATERIALS; HALIDE DOUBLE PEROVSKITES; CHEMICAL BATH DEPOSITION; SPIN-COATING PROCESS; SULFIDE THIN-FILMS; OPTICAL-PROPERTIES; SINGLE JUNCTION;
D O I
10.1002/adfm.202100265
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The wide bandgap Sb2S3 is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thin-film technologies, Sb2S3 based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley-Queisser (S-Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb2S3 solar cells is urgently warranted. In this review, the progress and present status of Sb2S3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb2S3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.
引用
收藏
页数:28
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