High voltage generator using a heap-pump circuit for low voltage embedded FLASH memories

被引：0
|
作者：
Kim, JS [1 ]
Kim, S [1 ]
机构：
[1] Wonkwang Univ, Dept Elect Elect & Informat Engn, Iksan 570749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 41卷 / 04期
关键词：
high voltage generator; charge pump circuit;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A charge-pump circuit suitable for positive high-voltage generators operating in the 1.5V range is presented. The proposed heap-pump circuit provides a high-voltage generator having not only a high pumping efficiency due to elimination of the threshold voltage drop of switches but also the simplest control with a single phase-clock scheme.
引用
收藏
页码：468 / 470
页数：3
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