Realization of As-doped p-type ZnO thin films using sputter deposition

被引：18
|
作者：
Choi, Hyung-Kyu [1 ]
Park, Jang-Ho [1 ]
Jeong, Sang-Hun [2 ]
Lee, Byung-Teak [1 ]
机构：
[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea
[2] Korea Basic Sci Inst, Gwangju Ctr, Kwangju 500757, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 10期
关键词：
N-TYPE;
D O I：
10.1088/0268-1242/24/10/105003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Arsenic-doped p-type ZnO (p-ZnO:As) thin films were deposited by the magnetron sputtering technique. High-resolution low-temperature photoluminescence (PL) spectra of the films revealed emissions at 3.35 eV and 3.32 eV, representing the neutral-acceptor-bound exciton transition and the free electron to acceptor level transition. Electroluminescence spectra of the p-n diodes fabricated from the p-ZnO:As/n-GaN heterostructure showed UV emission at about 380 nm and yellowish visible lights centered at 600-650 nm, which resembled the PL spectrum of the ZnO: As layer. The p-type ZnO films with 1at% As grown at 500 degrees C showed a hole concentration of 5 x 10(12)-7 x 10(13) cm(-3) after the deposition and 4 x 10(14)-1 x 10(16) cm(-3) after annealing at 600 degrees C in oxygen atmosphere. High-resolution x-ray photoelectron spectroscopy indicated that most of the As dopants occupy Zn sites within the ZnO: As films.
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页数：4
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