PIN/Preamp receiver modules for 40 Gb/s optical communication systems

被引:0
|
作者
Takechi, M [1 ]
Araki, K [1 ]
Furukawa, Y [1 ]
Sato, K [1 ]
Tokumitsu, T [1 ]
Kobayashi, M [1 ]
Onishi, H [1 ]
Dutta, AK [1 ]
Shigematsu, H [1 ]
机构
[1] Fujitsu Quantum Devices Ltd, Yamanashi 4093883, Japan
关键词
40; Gb/s; OC-786; waveguide PIN; pHEMT; traveling wave amplifier; distributed amplifier;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The PIN/Preamp receiver modules suitable for 40 Gb/s optical communication systems are presented. The waveguide PIN photodiodes with a polarization insensitive spot size converter and a GaAs pHEMT traveling wave amplifiers (TWA), which have a typical transimpedance of 150 ohms and a linear operating output voltage more than 700 mVpp, have been assembled in hermetic sealed compact packages. The receiver modules have the responsivity greater than 0.72 A/W, the polarization dependent loss less than 0.2 dB in the wavelength range from 15 10 nm to 1620 nm, 45 GHz bandwidth, and the input equivalent noise current density less than 15 pA/sqrtHz. The wide eye opening has been confirmed at the average optical input power of -12 dBm in both 40 Gb/s RZ and NRZ data format. The sensitivity less than -11 dBm has been achieved at BER = 1 x 10(-9) in 40 Gb/s PRBS 2(7)-1 NRZ signal. These results indicate that this receiver module can be used not only in long haul application but also in the very short haul application.
引用
收藏
页码:449 / 457
页数:9
相关论文
共 50 条
  • [31] Effect of first-order PMD on signal frequency spectrum in 40 Gb/s optical communication systems
    Hu, Hao
    Yu, Jin-Long
    Wang, Jian
    Liu, Jian-Fei
    Gao, Qing
    Zhang, Li-Tai
    Yang, En-Ze
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2007, 18 (10): : 1195 - 1198
  • [32] InGaP/GaAs HBT/PIN technology for 20 Gb/s and 40 Gb/s OEICs
    Mu, JH
    Feng, M
    TERAHERTZ AND GIGAHERTZ ELECTRONICS AND PHOTONICS II, 2000, 4111 : 182 - 191
  • [33] An HBT Preamplifier for 40-Gb/s optical transmission systems
    Suzuki, Y
    Shimawaki, H
    Amamiya, Y
    Fukuchi, K
    Nagano, N
    Yano, H
    Honjo, K
    GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, : 203 - 206
  • [34] An ultra high speed waveguide avalanche photodiode for 40-Gb/s optical receiver
    Nakata, T
    Takeuchi, T
    Makita, K
    Amamiya, Y
    Suzuki, Y
    Torikai, T
    ECOC'01: 27TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOLS 1-6, 2001, : 564 - 565
  • [35] System characterization of a passive 40 Gb/s All Optical Clock Recovery ahead of the receiver
    Roncin, Vincent
    Lobo, Sebastien
    Bramerie, Laurent
    O'Hare, Arthur
    Simon, Jean-Claude
    OPTICS EXPRESS, 2007, 15 (10): : 6003 - 6009
  • [36] Metamorphic PIN photodiodes for the 40 Gb/s fiber market
    Whelan, CS
    Marsh, PF
    Leoni, RE
    Hunt, J
    Grigas, A
    Hoke, WE
    Hwang, KC
    Kazior, TE
    Joshi, AM
    Wang, X
    GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001, 2001, : 251 - 254
  • [37] A 25Gb/s 170μW/Gb/s Optical Receiver in 28nm CMOS for Chip-to-Chip Optical Communication
    Saeedi, Saman
    Emami, Azita
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 283 - 286
  • [38] The application of parallel optical transmitter and receiver modules in communication subsystems
    Chen, Xiongbin
    Chen, Hongda
    Tang, Jun
    Pei, Weihua
    Zhou, Yi
    TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4, 2006, : 468 - +
  • [39] Development of packaging technologies for high-speed (>40 Gb/s) optical modules
    Choi, Kwang-Seong
    Kwon, Yong-Hwan
    Choe, Joong-Seon
    Chung, Yong-Duck
    Kang, Young-Shik
    Kim, Jeha
    Ahn, Byoung-Tae
    Moon, Jong-Tae
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2006, 12 (05) : 1017 - 1024
  • [40] Fabrication of InP heterostructure bipolar transistors for 40 Gb/s communication systems
    Abid, Z
    ICM 2000: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2000, : 133 - 136