A Wideband 60 GHz Class-E/F2 Power Amplifier in 40nm CMOS

被引：0
|
作者：
Babaie, Masoud [1 ]
Staszewski, Robert Bogdan [1 ,2 ]
Galatro, Luca [1 ]
Spirito, Marco [1 ]
机构：
[1] Delft Univ Technol, NL-2600 AA Delft, Netherlands
[2] Univ Coll Dublin, Dublin, Ireland
来源：
PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015) | 2015年
关键词：
Power amplifier; mm-wave; class-E/F-2; switched-mode; transformer; PA stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated 60 GHz power amplifier in 40nm CMOS that reaches the highest reported product of power-added efficiency and bandwidth. It is achieved through low/moderate coupling-factor transformers in the preliminary stages and a proper second harmonic termination of the output stage, such that it can operate as a class-E/F-2 switched-mode PA at the saturation point. The three-stage PA delivers 17.9dBm saturated output power with 20% peak PAE. It demonstrates a bandwidth of 9.7 GHz with a peak gain of 21.6 dB.
引用
收藏
页码：215 / 218
页数：4
相关论文
共 50 条
  • [21] A CMOS Class-A 65nm Power Amplifier for 60 GHz Applications
    Quemerais, T.
    Moquillon, L.
    Pruvose, S.
    Fournier, J. -M.
    Benech, P.
    Corrao, N.
    2010 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 2010, : 120 - +
  • [22] A 65 nm CMOS 30 dBm Class-E RF Power Amplifier With 60% PAE and 40% PAE at 16 dB Back-Off
    Apostolidou, Melina
    van der Heijden, Mark P.
    Leenaerts, Domine A. W.
    Sonsky, Jan
    Heringa, Anco
    Volokhine, Iouri
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (05) : 1372 - 1379
  • [23] A Digitally Modulated 60GHz Polar Transmitter in 40nm CMOS
    Khalaf, K.
    Vidojkovic, V.
    Vaesen, K.
    Long, J. R.
    Van Thillo, W.
    Wambacq, P.
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 159 - 162
  • [24] A Digitally Modulated Class-E Polar Amplifier in 90 nm CMOS
    Chironi, Vincenzo
    Debaillie, Bjorn
    D'Amico, Stefano
    Baschirotto, Andrea
    Craninckx, Jan
    Ingels, Mark
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2013, 60 (04) : 918 - 925
  • [25] Broadband CMOS class-E power amplifier for LTE applications
    Kalim, Danish
    Erguvan, Denis
    Negra, Renato
    2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009), 2009, : 100 - 103
  • [26] A High-Efficiency Linear Power Amplifier for 28GHz Mobile Communications in 40nm CMOS
    Zhang, Yang
    Reynaert, Patrick
    2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2017, : 33 - 36
  • [27] 5.3 GHz 42% PAE class-E power amplifier with 532 mW/mm2 power area density in 180 nm CMOS process
    Alsuraisry, H.
    Wu, M. -H.
    Huang, P. -S.
    Tsai, J. -H.
    Huang, T. -W.
    ELECTRONICS LETTERS, 2016, 52 (15) : 1338 - 1339
  • [28] A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS
    Thyagarajan, Siva V.
    Niknejad, Ali M.
    Hull, Christopher D.
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (08) : 2253 - 2262
  • [29] An Ultra-Compact 0.17 mm2 2.4 GHz Low-Voltage Class-E Power Amplifier in 28 nm CMOS
    Seidel, Andres
    Kreissig, Martin
    Ellinger, Frank
    2018 IEEE-APS TOPICAL CONFERENCE ON ANTENNAS AND PROPAGATION IN WIRELESS COMMUNICATIONS (APWC), 2018, : 743 - 745
  • [30] 5GHz-band CMOS Class-E Power Amplifier Module Considering Wire Bonding
    Kanaya, Haruichi
    2015 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT), 2015, : 157 - 159
12345