Preparation and characterization of nanocrystalline CdSe thin films deposited by SILAR method

被引：72
|
作者：
Pathan, HM
Sankapal, BR
Desai, JD
Lokhande, CD [1 ]
机构：
[1] Shivaji Univ, Dept Phys, Thin Films Phys Lab, Kolhapur 416004, Maharashtra, India
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
[3] SSGM Coll, Kopargaon, India
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 78卷 / 01期
关键词：
CdSe; nanocrystalline thin film; SILAR method;
D O I：
10.1016/S0254-0584(02)00198-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The successive ionic layer adsorption and reaction (SILAR) method has been used for the first time to deposit nanocrystalline Use thin film onto glass substrates. The SILAR method is a modified version of chemical bath deposition (CBD) method in a way that substrates are immersed in cations and anions alternatively and film growth takes place on the substrates. The preparative conditions such as concentration, pH, temperature, immersion time, immersion cycles, etc. are optimized to get nanocrystalline Use films. The films are characterized by high resolution transmission electron micrograph (HRTEM), energy dispersive X-ray analysis (EDAX), X-ray diffraction, optical absorption and electrical resistivity measurements. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：11 / 14
页数：4
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