Vacancy formation on stepped Cu(100) accelerated with STM: Molecular dynamics and kinetic Monte Carlo simulations

被引：21

作者：

Kolesnikov, S. V. ^{[1
]}

Klavsyuk, A. L. ^{[1
]}

Saletsky, A. M. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 24期

关键词：

copper; molecular dynamics method; Monte Carlo methods; scanning tunnelling microscopy; vacancies (crystal); SCANNING-TUNNELING-MICROSCOPY; CU(001) SURFACE; DIFFUSION; GROWTH; ADATOMS; CO; CLUSTERS; BARRIERS; CU(111); ALLOY;

D O I：

10.1103/PhysRevB.80.245412

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation of vacancies on stepped Cu(100) surface during the usage of scanning tunneling microscope (STM) is investigated on the atomic scale by performing molecular dynamics and kinetic Monte Carlo simulations. The atomic processes responsible for vacancy formation on both upper and lower terraces during the scanning are identified. We investigate the possibility of increasing of local intensity of vacancy formation with STM tip at different temperatures. The influence of trajectory and velocity of STM tip is also demonstrated. Finally, we suggest the effective method to accelerate formation of free vacancies on the stepped Cu(100) surface.

引用

页数：7

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