Additively Manufactured Impinging Air Jet Cooler for High-Power Electronic Devices

被引:0
|
作者
Kwon, Beomjin [1 ]
Foulkes, Thomas [2 ]
Yang, Tianyu [3 ]
Miljkovic, Nenad [3 ]
King, William P. [3 ]
机构
[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
[2] Univ Illinois, Elect & Comp Engn, Urbana, IL 61821 USA
[3] Univ Illinois, Mech Sci & Engn, Urbana, IL 61821 USA
关键词
Impinging air jet; jet nozzle; convection cooling; additive manufacturing; high-power electronics; HEAT-TRANSFER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report an air jet cooler made with additive manufacturing. The air jet cooler directs an impinging air jet directly onto electronic devices. The jet system was fabricated by a single manufacturing process using a resin-based three-dimensional printer, and monolithically integrates two nozzles, air delivery channel, flow distributor and mechanical fixtures within a volume of 80x80x80 mm(3). To demonstrate the viability of the jet cooler, high power gallium nitride (GaN) transistors were cooled using air jets at up to 195 m/sec. With the air jet, a GaN transistor could dissipate heat flux up to 60 W/cm(2), which was 7X larger than the maximum allowable heat flux under natural convection cooling. The air jet cooler is also capable of rapid switching of the cooling air. Direct impingement of air jet could reduce the GaN transistor temperature by similar to 70 degrees C within 11 seconds. This work demonstrates the potential of additively manufactured air jet coolers as a compact thermal management scheme for high-power electronics. Since the geometry of the air jet coolers can be easily tailored to various shapes, the demonstrated concept can be applied for cooling a variety of electronics with different topologies and different layouts of hot spots.
引用
收藏
页码:941 / 945
页数:5
相关论文
共 50 条
  • [21] Additively manufactured electrodes for plasma and power-flow studies in high-power transmission lines on the 1-MA MAIZE facility
    Smith, T. J.
    Campbell, P. C.
    Dowhan, G., V
    Jordan, N. M.
    Johnston, M. D.
    Cuneo, M. E.
    Laity, G. R.
    McBride, R. D.
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2021, 92 (05):
  • [22] DIAMOND SHINES IN HIGH-POWER DEVICES
    LINE, L
    MICROWAVES & RF, 1984, 23 (07) : 74 - &
  • [23] Burn-in for high-power devices
    Hamilton, H
    Urbanek, J
    EE-EVALUATION ENGINEERING, 2006, 45 (03): : 40 - 43
  • [24] Silicon carbide high-power devices
    Weitzel, CE
    Palmour, JW
    Carter, CH
    Moore, K
    Nordquist, KJ
    Allen, S
    Thero, C
    Bhatnagar, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) : 1732 - 1741
  • [25] PROGRESS IN MICROWAVE HIGH-POWER DEVICES
    HORI, S
    MICROWAVE JOURNAL, 1987, 30 (07) : 60 - 60
  • [26] IBIC analysis of high-power devices
    Osipowicz, T
    Zmeck, M
    Watt, F
    Fiege, G
    Balk, L
    Niedernostheide, F
    Schulze, HJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 181 : 311 - 314
  • [27] Die bonding for high-power devices
    Wills, Edward J.
    Advanced Packaging, 2002, 11 (05): : 21 - 23
  • [28] Lifetime engineering in high-power devices
    Vobecky, J
    ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS, 2000, : 21 - 28
  • [29] Applications abound for high-power devices
    Matthews, SJ
    LASER FOCUS WORLD, 2000, 36 (08): : 177 - +
  • [30] HIGH-POWER EFFECTS IN FERRITE DEVICES
    SEIDEN, PE
    SHAW, HJ
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (01): : 122 - 122