Structural and magnetic properties of the molecular beam epitaxy grown MnSb layers on GaAs substrates

被引:10
|
作者
Lawniczak-Jablonska, Krystyna [1 ]
Wolska, Anna [1 ]
Bak-Misiuk, Jadwiga [1 ]
Dynowska, Elzbieta [1 ]
Romanowski, Przemyslaw [1 ]
Domagala, Jaroslaw Z. [1 ]
Minikayev, Roman [1 ]
Wasik, Dariusz [2 ]
Klepka, Marcin T. [1 ]
Sadowski, Janusz [1 ,3 ]
Barcz, Adam [1 ]
Dluzewski, Piotr [1 ]
Kret, Slawomir [1 ]
Twardowski, Andrzej [2 ]
Kaminska, Maria [2 ]
Persson, Andreas [4 ]
Arvanitis, Dimitri [4 ]
Holub-Krappe, Elisabeth [5 ]
Kwiatkowski, Adam [2 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Univ Warsaw, Fac Phys, Inst Expt Phys, PL-00681 Warsaw, Poland
[3] Lund Univ, Max Lab, SE-22100 Lund, Sweden
[4] Uppsala Univ, Dept Phys, S-75121 Uppsala, Sweden
[5] Helmholtz Ctr Berlin Mat & Energy, Inst Complex Magnet Mat MI1, D-14109 Berlin, Germany
关键词
MAGNETOOPTICAL PROPERTIES; FILMS; MAGNETOTRANSPORT; ALLOYS; SB;
D O I
10.1063/1.3246806
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs (111) B and on GaAs (100) substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the (100) oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples. (C) 2009 American Institute of Physics. [doi:10.1063/1.3246806]
引用
收藏
页数:13
相关论文
共 50 条
  • [21] Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates
    Izhnin, I. I.
    Izhnin, A. I.
    Savytskyy, H. V.
    Fitsych, O. I.
    Mikhailov, N. N.
    Varavin, V. S.
    Dvoretsky, S. A.
    Sidorov, Yu. G.
    Mynbaev, K. D.
    OPTO-ELECTRONICS REVIEW, 2012, 20 (04) : 375 - 378
  • [22] Surface corrugation of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
    Yamamoto, Masanori
    Higashiwaki, Masataka
    Shimomura, Satoshi
    Sano, Naokatsu
    Hiyamizu, Satoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (10): : 6285 - 6289
  • [23] Surface corrugation of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
    Yamamoto, M
    Higashiwaki, M
    Shimomura, S
    Sano, N
    Hiyamizu, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6285 - 6289
  • [24] Structural Properties of TaAs Weyl Semimetal Thin Films Grown by Molecular Beam Epitaxy on GaAs(001) Substrates
    Sadowski, Janusz
    Domagala, Jaroslaw Z.
    Zajkowska, Wiktoria
    Kret, Slawomir
    Seredynski, Bartlomiej
    Gryglas-Borysiewicz, Marta
    Ogorzalek, Zuzanna
    Bozek, Rafal
    Pacuski, Wojciech
    CRYSTAL GROWTH & DESIGN, 2022, 22 (10) : 6039 - 6045
  • [25] Molecular beam epitaxy of MnSb/MnAs multilayers on GaAs
    Ono, K
    Uragami, T
    Mizuguchi, M
    Fujioka, H
    Oshima, M
    Tanaka, M
    Akinaga, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 556 - 560
  • [26] Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
    Ok, YW
    Choi, CJ
    Seong, TY
    Uesugi, K
    Suemune, I
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (07) : 900 - 906
  • [28] Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy
    Ploog, KH
    Dhar, S
    Trampert, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1756 - 1759
  • [29] Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
    Young-Woo Ok
    Chel-Jong Choi
    Tae-Yeon Seong
    K. Uesugi
    I. Suemune
    Journal of Electronic Materials, 2001, 30 : 900 - 906
  • [30] Electrical, magnetic, and structural properties of Sn1-xMnxTe layers grown by molecular beam epitaxy
    Nadolny, AJ
    Sadowski, J
    Story, T
    Dobrowolski, W
    Arciszewska, M
    Swiatek, K
    Kachniarz, J
    Adamczewska, J
    ACTA PHYSICA POLONICA A, 1998, 94 (03) : 449 - 453