Amorphous film thickness dependence for epitaxy of perovskite oxide films under excimer laser irradiation

被引:5
|
作者
Nakajima, Tomohiko [1 ]
Tsuchiya, Tetsuo
Ichihara, Masaki [2 ]
Nagai, Hideaki
Kumagai, Toshiya
机构
[1] Natl Inst Adv Ind Sci & Technol, Adv Mfg Res Inst, Tsukuba, Ibaraki 3058565, Japan
[2] Univ Tokyo, Mat Design & Characterizat Lab, Inst Solid State Phys, Chiba 2778581, Japan
关键词
Excimer laser assisted metal organic deposition; Epitaxial growth; Low temperature fabrication; THIN-FILMS; FABRICATION; EVOLUTION; GROWTH;
D O I
10.1016/j.apsusc.2009.04.068
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have studied the epitaxial growth of perovskite manganite LaMnO3 (LMO) on SrTiO3(1 0 0) in the excimer laser assisted metal organic deposition process. The LMO was preferentially grown from the substrate surface by the KrF laser irradiation. The study of amorphous LMO film thickness dependence on epitaxial growth under the excimer laser irradiation revealed that the photo-thermal heating effect strongly depended on the amorphous film thickness due to a low thermal conductivity of amorphous LMO: the ion-migration for chemical bond-forming at the reaction interface would be strongly enhanced in the amorphous LMO film with the large film thickness about 210 nm. On the other hand, the photochemical effect occurred efficiently for the amorphous film thickness in the range of 35-210 nm. These results indicate that the epitaxial growing rate was dominated by the photo-thermal heating after the photo-chemical activation at the growth interface. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:9775 / 9778
页数:4
相关论文
共 50 条
  • [31] Impact of film thickness in laser-induced periodic structures on amorphous Si films
    Liye Xu
    Jiao Geng
    Liping Shi
    Weicheng Cui
    Min Qiu
    [J]. Frontiers of Optoelectronics, 16
  • [32] Impact of film thickness in laser-induced periodic structures on amorphous Si films
    Liye Xu
    Jiao Geng
    Liping Shi
    Weicheng Cui
    Min Qiu
    [J]. Frontiers of Optoelectronics., 2023, 16 (02) - 124
  • [33] Generation of Ce and W doped titanium oxide thin films by pulsed excimer laser irradiation
    Joya, Yasir F.
    Liu, Zhu
    [J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (03): : 589 - 594
  • [34] A STUDY ON EXCIMER LASER AMORPHOUS-SILICON FILM CRYSTALLIZATION
    BIANCONI, M
    FONSECA, FJ
    SUMMONTE, C
    FORTUNATO, G
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 725 - 728
  • [35] Thickness dependence of polarization in ferroelectric perovskite thin films
    Liu, G
    Nan, CW
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (04) : 584 - 589
  • [36] THICKNESS DEPENDENCE OF AN AMORPHOUS OVERLAYER GE FILM ON ELECTRICAL-CONDUCTIVITY OF ULTRATHIN PT FILMS
    OGAWA, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 363 - 365
  • [37] Epitaxial Growth Mechanism for Perovskite Oxide Thin Films under Pulsed Laser Irradiation in Chemical Solution Deposition Process
    Nakajima, Tomohiko
    Tsuchiya, Tetsuo
    Ichihara, Masaki
    Nagai, Hideaki
    Kumagai, Toshiya
    [J]. CHEMISTRY OF MATERIALS, 2008, 20 (23) : 7344 - 7351
  • [38] Dependence of film tension on the thickness of smectic films
    Jaquet, R
    Schneider, F
    [J]. PHYSICAL REVIEW E, 2003, 67 (02):
  • [39] Supercooling and structural relaxation in amorphous Ge films under pulsed laser irradiation
    Solis, J
    Siegel, J
    Afonso, CN
    Jimenez, J
    Garcia, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) : 236 - 242
  • [40] Dynamic Phase Transition in Amorphous YBaCuO Films under Ar Laser Irradiation
    Z. A. Samoilenko
    V. D. Okunev
    E. I. Pushenko
    V. A. Isaev
    P. Gierlowski
    K. Kolwas
    S. J. Lewandowski
    [J]. Inorganic Materials, 2003, 39 : 836 - 842