A Sensitive Visible Light Photodetector Using Cobalt-Doped Zinc Ferrite Oxide Thin Films

被引：34
|
作者：
Chung, Pin-Hung [1 ]
Kuo, Chia-Tung [1 ]
Wang, Tzu-Hsuan [1 ]
Lu, You-Yan [1 ]
Liu, Chao-, I [1 ]
Yew, Tri-Rung [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
来源：
ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 05期
关键词：
metal oxides; thin films; sensitivity; photodetectors; Co-doped zinc ferrite; visible light; PHOTOCATALYTIC ACTIVITY; FACILE SYNTHESIS; ZNFE2O4; FABRICATION; PHOTOLUMINESCENCE; NANOSTRUCTURES; COMPOSITE; POLYMER; DEVICE; ZN;
D O I：
10.1021/acsami.0c20487
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 degrees C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferritethin-film/indium-tin-oxide on p(+)-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I-V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.
引用
收藏
页码：6411 / 6420
页数：10
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