A Sensitive Visible Light Photodetector Using Cobalt-Doped Zinc Ferrite Oxide Thin Films

被引：34

作者：

Chung, Pin-Hung ^{[1
]}

Kuo, Chia-Tung ^{[1
]}

Wang, Tzu-Hsuan ^{[1
]}

Lu, You-Yan ^{[1
]}

Liu, Chao-, I ^{[1
]}

Yew, Tri-Rung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2021年 / 13卷 / 05期

关键词：

metal oxides; thin films; sensitivity; photodetectors; Co-doped zinc ferrite; visible light; PHOTOCATALYTIC ACTIVITY; FACILE SYNTHESIS; ZNFE2O4; FABRICATION; PHOTOLUMINESCENCE; NANOSTRUCTURES; COMPOSITE; POLYMER; DEVICE; ZN;

D O I：

10.1021/acsami.0c20487

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 degrees C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferritethin-film/indium-tin-oxide on p(+)-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I-V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.

引用

页码：6411 / 6420

页数：10

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