Optical and electrical characterization of In-doped ZnMgO films grown by spray pyrolysis method

被引：3

作者：

Yoshino, Kenji ^{[1
]}

Oshima, Minoru ^{[1
]}

Takemoto, Yujin ^{[1
]}

Oyama, Satoshi ^{[1
]}

Yoneta, Minoru ^{[2
]}

机构：

[1] Miyazaki Univ, Dept Elect & Elect Engn, 1-1 Gakuen Kibanadai, Miyazaki 8892192, Japan

[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期

关键词：

MOLECULAR-BEAM EPITAXY; ZN1-XMGXO THIN-FILMS; BAND-GAP; MGXZN1-XO ALLOY; DEPOSITION; ZNO; PHOTODETECTORS; TEMPERATURE; MAGNESIUM;

D O I：

10.1002/pssc.200881140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-doped Zn0.9Mg0.1O (0 similar to 5 mol%) films on glass substrate were successfully grown by a spray pyrolysis method at 500 degrees C. The c-axis orientation became weak with increasing indium concentration. This indicated that In-doping caused the degree of crystallinity of the Zn0.9Mg0.1O films to decrease. Indium atoms could be acted as a donor type impurity because electrical conduction types in the undoped and Indoped films indicated all n-types and In-doping caused the resistivity to decrease and carrier concentration to increase. Furthermore, In-doping caused the number of nonradiative recombination centers to increase because photo luminescence intensity decreased with increasing indium concentration. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

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页码：1120 / +

页数：3

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